2SC5881 Datasheet, PDF (2/4 Pages) Rohm – Power transistor (60V, 5A)

Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Condition
BVCEO
60
−
−
V
IC=1mA
Collector-emitter breakdown voltage
BVCES
100
−
−
V
IC=100µA
Collector-base breakdown voltage BVCBO
100
−
−
V
IC=100µA
Emitter-base breakdown voltage
BVEBO
6.5
−
−
V
IE=100µA
Collector cut-off current
ICBO
−
−
1.0
µA
VCB=40V
Emitter cut-off current
IEBO
−
−
1.0
µA
VEB=4V
Collector-emitter saturation voltage VCE (sat)
−
200
400
mV
IC=3.0A
∗1
IB=300mA
DC current gain
Transition frequency
hFE
120
−
390
−
VCE=2V
IC=100mA
−
VCE=10V
∗1
fT
−
160
MHz IE= −100mA
f=10MHz
−
VCB=10V
Corrector output capacitance
Cob
−
30
pF
IE=0mA
−
f=1MHz
Turn-on time
Storage time
Fall time
Ton
−
70
−
ns
IC=5A
∗2
Tstg
−
150
−
ns
IB1=500mA
IB2= −500mA
Tf
−
25
ns
VCC 25V
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
2SC5881
zhFE RANK
Q
120−270
R
180−390
zElectrical characteristic curves
100
10
100ms
10ms
1ms
1
500µs
DC
0.1
Single
non repetitive
0.01 ^Pulsed
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
Ta=25°C
100
10
VCE=5V
VCE=3V
VCE=2V
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
1000
Tstg
Ton
100
Tf
Ta=25°C
VCC=25V
IC / IB=10 / 1
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
10
IC / IB=10 / 1
1
Ta=125°C
0.1
Ta=25°C
Ta= −40°C
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
1000
100 _Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE=2V
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (Ι)
10
Ta=25°C
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
Rev.B
2/3