2SC5880_11 Datasheet, PDF (2/4 Pages) Rohm – Power transistor (60V, 2A)

2SC5880
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Condition
Collector-emitter breakdown voltage BVCEO
60
Collector-base breakdown voltage BVCBO
60
Emitter-base breakdown voltage
BVEBO
6
Collector cut-off current
ICBO
−
Emitter cut-off current
IEBO
−
Collector-emitter saturation voltage VCE (sat)
−
−
−
V
IC=1mA
−
−
V
IC=100μA
−
−
V
IE=100μA
−
1.0
μA
VCB=40V
−
1.0
μA
VEB=4V
200
500
mV
IC=1.0A
IB=0.1A
DC current gain
Transition frequency
hFE
120
−
390
−
VCE=2V
IC=100mA
VCE=10V
∗
fT
−
200
−
MHz IE= −100mA
f=10MHz
Corrector output capacitance
VCB=10V
Cob
−
10
−
pF
IE=0mA
Turn-on time
Storage time
Fall time
f=1MHz
ton
−
50
−
ns
IC=2A
tstg
−
120
−
ns
IB1=200mA
IB2= −200mA
tf
−
35
−
ns
VCC 25V
∗Non repetitive pulse
hFE RANK
Q
120−270
R
180−390
Data Sheet
Electrical characteristic curves
10
VCE=2V
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
0.01
0
0.5
1
1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter
Propagation Characteristics
1000
100
10
Ta=25°C
VCE=5V
VCE=3V
VCE=2V
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 DC Current Gain vs.
Collector Current (Ι)
1000
100 _Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE=2V
1
0.001 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
10
1
IC / IB=20 / 1
IC / IB=10 / 1
0.1
Ta=25°C
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
10
1
Ta=125°C
Ta=25°C
Ta= −40°C
0.1
IC / IB=10 / 1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
10
IC / IB=10 / 1
1
Ta=125°C
Ta=25°C
0.1
Ta= −40°C
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
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2011.03 - Rev.C