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2SC5876_11 Datasheet, PDF (2/4 Pages) Rohm – Medium power transistor (60V, 0.5A) | |||
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2SC5876
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collectorâbase breakdown voltage BVCBO 60
â
â
V IC=100μA
Collectorâemitter breakdown voltage BVCEO 60
â
â
V IC=1mA
Emitterâbase breakdown voltage BVEBO 6
â
â
V IE=100μA
Collector cut-off current
ICBO
â
â
1.0 μA VCB=40V
Emitter cut-off current
IEBO
â
â
1.0 μA VEB=4V
Collectorâemitter staturation voltage VCE(sat) â
150 300 mV IC=100mA, IB=10mA
DC current gain
hFE
120
â
390
â VCE=2V, IC=50mA
Transition frequency
fT
â
300
â
MHz VCE=10V, IE= â100mA, f=10MHz â1
Collector output capacitance
Cob
â
5
â
pF VCB=10V, IE=0mA, f=1MHz
Turn-on time
Storage time
Fall time
ton
â
70
â
ns IC=500mA,
tstg
â
130
â
ns IB1=50mA
IB2= â50mA
tf
â
80
â
ns VCC 25V â1
â1 Pulse measurement
ï¬hFE RANK
Q
120-270
R
180-390
Data Sheet
ï¬Electrical characteristic curves
1000
Tstg
Ta=25°C
VCC=25V
IC/IB=10/1
100
Tf
Ton
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
1000
Ta=125°C
100
Ta=25°C
Ta= â40°C
VCE=2V
10
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.2 DC current gain vs. collector
current
1000
100
10
Ta=25°C
VCE=5V
VCE=2V
VCE=3V
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector
current
10
10
IC/IB=10/1
Ta=25°C
1
Ta=125°C
0.1
Ta=25°C
Ta= â40°C
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage
vs. collector current
1
IC/IB=20/1
0.1
IC/IB=10/1
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
10
Ta= â40°C
1
IC/IB=10/1
Ta=125°C
0.1
Ta=25°C
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.6 Base-emitter saturation voltage
vs. collector current
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âc 2011 ROHM Co., Ltd. All rights reserved.
2011.03 - Rev.B
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