2SC5876T106R Datasheet, PDF (2/4 Pages) Rohm – Medium power transistor (60V, 0.5A)

2SC5876
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector−base breakdown voltage BVCBO 60
−
−
V IC=100μA
Collector−emitter breakdown voltage BVCEO 60
−
−
V IC=1mA
Emitter−base breakdown voltage BVEBO 6
−
−
V IE=100μA
Collector cut-off current
ICBO
−
−
1.0 μA VCB=40V
Emitter cut-off current
IEBO
−
−
1.0 μA VEB=4V
Collector−emitter staturation voltage VCE(sat) −
150 300 mV IC=100mA, IB=10mA
DC current gain
hFE
120
−
390
− _{VCE=2V, IC=50mA}
Transition frequency
fT
−
300
−
MHz _{VCE=10V, IE= −100mA, f=10MHz} ∗1
Collector output capacitance
Cob
−
5
−
pF VCB=10V, IE=0mA, f=1MHz
Turn-on time
Storage time
Fall time
ton
−
70
−
ns IC=500mA,
tstg
−
130
−
ns ^IB1=50mA
IB2= −50mA
tf
−
80
−
ns _{VCC 25V} ^∗1
∗1 Pulse measurement
hFE RANK
Q
120-270
R
180-390
Data Sheet
Electrical characteristic curves
1000
Tstg
Ta=25°C
VCC=25V
IC/IB=10/1
100
Tf
Ton
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.1 Switching Time
1000
Ta=125°C
100
Ta=25°C
Ta= −40°C
VCE=2V
10
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.2 DC current gain vs. collector
current
1000
100
10
Ta=25°C
VCE=5V
VCE=2V
VCE=3V
1
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector
current
10
10
IC/IB=10/1
Ta=25°C
1
Ta=125°C
0.1
Ta=25°C
Ta= −40°C
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage
vs. collector current
1
IC/IB=20/1
0.1
IC/IB=10/1
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
10
Ta= −40°C
1
IC/IB=10/1
Ta=125°C
0.1
Ta=25°C
0.01
0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
Fig.6 Base-emitter saturation voltage
vs. collector current
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2011.03 - Rev.B