2SC5865TLR Datasheet, PDF (2/4 Pages) Rohm – High voltage discharge, High speed switching, Low Noise (60V, 1A)

2SC5865
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCEO 60
Collector-base breakdown voltage BVCBO 60
Emitter-base breakdown voltage
BVEBO
6
Collector cut-off current
ICBO
−
Emitter cut-off current
IEBO
−
Collector-emitter saturatioin voltage VCE(sat) −
DC current gain
hFE
120
Transistor frequency
fT
−
Collector output capacitance
Cob
−
Turn-on time
ton
−
Storage time
tstg
−
Fall time
tf
−
∗1 Non repetitive pulse
∗2 See switching characteristics measurement circuits
Typ.
−
−
−
−
−
200
−
250
10
50
130
50
Max.
−
−
−
1.0
1.0
500
390
−
−
−
−
−
Unit
Conditions
V IC=1mA
V IC=100μA
V IE=100μA
μA VCB=40V
μA VEB=4V
mV IC=500mA, IB=50mA
− VCE=2V, IC=100mA
MHz VCE=10V, IE= −100mA, f=10MHz^∗1
pF VCB=10V, IE=0mA, f=1MHz
ns IC=1A,
ns
IB1=100mA
IB2= −100mA
ns VCC 25V ^∗2
hFE RANK
Q
120-270
R
180-390
Data Sheet
Electrical characteristic curves
200
IB=500μA
160
450μA
400μA
120
350μA
300μA
250μA
80
200μA
150μA
40
100μA
50μA
0
0μA
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Typical output characteristics
1000
100
Tstg
Ta=25°C
VCC=25V
IC/IB=10/1
Tf
Ton
10
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
1000
Ta=125°C
VCE=2V
100
Ta= −40°C
Ta=25°C
10
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain
vs. collector current ( Ι )
1000
100
10
VCE=2V
Ta=25°C
VCE=5V
VCE=3V
1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain
vs. collector current ( ΙΙ )
10
IC/IB=10/1
1
Ta=125°C
0.1
Ta=25°C
Ta= −40°C
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( Ι )
10
Ta=25°C
1
IC/IB=100/1
0.1
IC/IB=20/1
IC/IB=10/1
0.01
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
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2011.03 - Rev.A