2SC4115S Datasheet, PDF (2/4 Pages) Rohm – Low Frequency Transistor (20V, 3A)

Transistors
2SC4115S
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
40
20
6
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.2
−
290
25
Max.
−
−
−
0.1
0.1
0.5
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=30V
VEB=5V
IC/IB=2A/0.1A
∗
VCE=2V, IC=0.1A
VCE=2V, IE= −0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz
zPackaging specifications and hFE
Type
Package
Code
Basic ordering
hFE unit (pieces)
Taping
TP
5000
2SC4115S QRS
hFE values are classified as follows :
Item
Q
R
S
hFE
120 to 270 180 to 390 270 to 560
zElectrical characteristic curves
10
VCE=2V
5
2
1
0.5
Ta=100°C
25°C
0.2
−40°C
0.1
0.05
0.02
0.01
5m
2m
1m
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
2
20mA
18mA
16mA
1.6 ^14mA
1.2
0.8
0.4
12mA
Ta=25°C
10mA
8mA
6mA
4mA
2mA
0
IB=0A
0
0.2
0.4
0.6
0.8
1.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( )
5 _50mA
45mA
40mA
4
3
2
1
35mA ^Ta=25°C
30mA
25mA
20mA
15mA
10mA
5mA
0
IB=0A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( )
Rev.A
2/3