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2SC4102_13 Datasheet, PDF (2/8 Pages) Rohm – NPN 50mA 120V High Voltage Amplifier transistors
2SC4102 / 2SC3906K
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
2SC4102
2SC3906K
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
Tj
Tstg
Data Sheet
Values
Unit
120
V
120
V
5
V
50
mA
100
mA
200
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Collector-emitter
breakdown voltage
Collector-base
breakdown voltage
Emitter-base
breakdown voltage
BVCEO
BVCBO
BVEBO
Conditions
IC = 1mA
IC = 50mA
IE = 50mA
Collector cut-off current
ICBO VCB = 100V
Emitter cut-off current
IEBO VEB = 4V
Collector-emitter
saturation voltage
VCE(sat) IC = 10mA, IB = 1mA
DC current gain
hFE VCE = 6V, IC = 2mA
Transition frequency
fT
VCE = 12V, IE = -2mA
f=100MHZ
Output capacitance
Cob
VCB = 12V, IE = 0mA,
f = 1MHz
*1 PW=100ms Single Pulse
*2 Each terminal mounted on a reference footprint
lhFE rank categories
Rank
R
hFE
180 to 390
S
270 to 560
Min. Typ. Max. Unit
120
-
-
V
120
-
-
V
5
-
-
V
-
-
0.5
mA
-
-
0.5
mA
-
-
0.5
V
180
-
560
-
-
140
-
MHz
-
2.5
-
pF
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2013.05 - Rev.B