2SC4102_1 Datasheet, PDF (2/3 Pages) Rohm – High-voltage Amplifier Transistor (120V, 50mA)

Transistors
zElectrical characteristics curves
10
25.0
22.5
8
20.0
17.5
6
15.0
12.5
4
10.0
7.5
2
5.0
2.5
IB=0µA
0
4
8
Ta=25°C
12
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
2SC4102 / 2SC3906K / 2SC2389S
50
Ta=25°C
VCE=6V
20
10
5
2
1
0.5
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristics
Ta=25°C
500
5V
3V
200
VCE=1V
100
50
0.2
0.5 1 2
5 10 20 50
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current
Ta=25°C
0.5
0.2
0.1
IC/IB=50
0.05
20
10
0.02
1
2
5 10 20
50
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( )
IC/IB=10
0.5
0.2
Ta=100°C
0.1
25°C
−40°C
0.05
0.02
1
2
5 10 20
50
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )
VCE=6V
Ta=25°C
500
200
100
50
−0.5 −1 −2 −5 −10 −20 −50
COLLECTOR CURRENT : IE (mA)
Fig.6 Gain bandwidth product vs. emitter current
Ta=25°C
Ta=25°C
f=1MHz
f=1MHz
20
IE=0A
20
IC=0A
10
10
5
5
2
1
−0.5
12
5 10 20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
2
1
−0.5
12
5 10 20
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8 Emitter input capacitance
vs. emitter-base voltage
Rev.A
2/2