2SC2411KT146Q Datasheet, PDF (2/4 Pages) Rohm – Medium Power Transistor (32V, 0.5A)

Transistors
2SC2411K
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 40
Collector-emitter breakdown voltage BVCEO 32
Emitter-base breakdown voltage
BVEBO
5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
DC current transfer ratio
hFE
120
Collector-emitter saturation voltage VCE (sat) −
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
−
−
250
6.5
Max.
−
−
−
1
1
390
0.6
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC = 100µA
IC = 1mA
IE = 100µA
VCB = 20V
VEB = 4V
VCE = 3V, IC = 100mA
IC/IB = 500mA/50mA
VCE = 5V, IE = −20mA, f = 100MHz
VCB = 10V, IE = 0A, f = 1MHz
zPackaging Specifications and hFE
Type
2SC2411K
Package
Code
hFE Basic ordering unit (pieces)
QR
hFE values are classified as follows:
Item
Q
R
hFE
120 to 270 180 to 390
Taping
T146
3000
zElectrical characteristic curves
1000
500 ^VCE=6V
200
100
Ta=100°C
50
20
80°C
10
25°C
5
−25°C
−55°C
2
1
0.5
0.2
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
100
Ta=25°C
0.50mA
50
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0
IB=0A
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( Ι )
1
Ta=25°C
lC/lB=10
0.5
0.2
0.1
0.05
0.02
0.5 1 2
5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Rev.A
2/3