2SB1184_1 Datasheet, PDF (2/4 Pages) Rohm – Power Transistor (−60V, −3A)

Transistors
2SB1184 / 2SB1243
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO −60
−
−
V IC= −50µA
Collector-emitter breakdown voltage BVCEO −50
−
−
V IC= −1mA
Emitter-base breakdown voltage
BVEBO
−5
−
−
V IE= −50µA
Collector cutoff current
ICBO
−
−
−1
µA VCB= −40V
Emitter cutoff current
IEBO
−
−
−1
µA VEB= −4V
Collector-emitter saturation voltage VCE(sat) −
−
−1
V IC/IB= −2A/ −0.2A
∗
DC current transfer ratio
hFE
82
−
390
− VCE= −3V, IC= −0.5A
∗
Transition frequency
fT
−
70
−
MHz VCE= −5V, IE=0.5A, f=30MHz
Output capacitance
∗ Measured using pulse current.
Cob
−
50
−
pF VCB= −10V, IE=0A, f=1MHz
zPackaging specifications and hFE
Package
Code
Type
hFE Basic ordering unit (pieces)
2SB1184 PQR
2SB1243 PQR
Taping
TL
TV2
2500
2500
−
−
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180 120 to 270 180 to 390
zElectrical characteristic curves
−10
VCE= −3V
−5
−2
−1
Ta=100°C
−0.5
25°C
-25°C
−0.2
−0.1
−0.05
−0.02
−0.01
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter
propagation characteristics
−3.0
−2.5
−2.0
−50mA
−45mA
−40mA
−35mA
−30mA
−25mA
Tc=25°C
−20mA
−15mA
−1.5
−10mA
−1.0
−5mA
−0.5
IB=0mA
00
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics ( )
−3.0
−50mA
−45mA
−2.5
−40mA
−35mA
−30mA
−2.0
−25mA
−20mA
Tc=25°C
−15mA
−1.5
−10mA
−1.0
−0.5
0
0
IB=−5mA
PC=15W
IB=0mA
−10 −20 −30 −40 −50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( )
Rev.A
2/3