2SAR542P Datasheet, PDF (2/8 Pages) Rohm – PNP -5.0A -30V Middle Power Transistor

2SAR542P
Data Sheet
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Collector-emitter
breakdown voltage
Collector-base
breakdown voltage
Emitter-base
breakdown voltage
BV_CEO
BV_CBO
BV_EBO
Conditions
I_C = -1mA
I_C = -100mA
I_E = -100mA
Collector cut-off current
I_CBO V_CB = -30V
Min. Typ. Max. Unit
-30
-
-
V
-30
-
-
V
-6
-
-
V
-
-
-1
mA
Emitter cut-off current
I_EBO V_EB = -4V
-
Collector-emitter
saturation voltage
V_CE(sat) ^*1 I_C = -2A, I_B = -100mA
-
DC current gain
h_FE V_CE = -2V, I_C = -500mA 200
Transition frequency
Output capacitance
f_T
V_CE = -10V, I_E = 100mA
f=100MH_Z
-
C_ob
V_CB = -10V, I_E = 0A,
f = 1MHz
-
Turn-on time
Storage time
Fall time
t_on ^*2
I_C= -2.5A
-
t_stg ^*2
I_B1= -250mA
I_B2=250mA
-
t_f ^*2
V_CC⋍ -10V
-
*1 Pulsed
*2 See switching time test circuit
-
-1
-0.20 -0.40
-
500
240
-
40
-
45
-
200
-
25
-
mA
V
-
MHz
pF
ns
ns
ns
lSwitching time test circuit
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2014.02 - Rev.C