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| 2SAR514P_09 Datasheet, PDF (2/5 Pages) Rohm – Midium Power Transistors (-80V / -0.7A) | |||
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2SAR514P
ï¬Electrical characteristic (Ta = 25ï°C)ï
Parameter
Symbol Min.
Collector-emitter breakdown voltage
BVCEO -80
Collector-base breakdown voltage
BVCBO -80
Emitter-base breakdown voltage
BVEBO
-6
Collector cut-off current
ICBO
-
Emitter cut-off current
IEBO
-
Collector-emitter staturation voltage
VCE(sat)
-
DC current gain
hFE
120
Transition frequency
fT
-
Collector output capacitance
Turn-on time
Storage time
Fall time
*1 See switching time test circuit
Cob
-
ton *1
-
tstg *1
-
tf *1
-
Data Sheet
Typ.
-
-
-
-
-
-200
-
380
10
50
350
50
Max.
-
-
-
-1
-1
-400
390
-
-
-
-
-
Unit
Conditions
V IC= -1mA
V IC= -100μA
V IE= -100μA
ïA VCB= -80V
ïA VEB= -4V
mV IC= -300mA, IB= -15mA
- VCE= -3V, IC= -100mA
MHz
VCE= -10V
IE=200mA, f=100MHz
pF
VCB= -10V, IE=0A
f=1MHz
ns
ns
IC= -0.35A, IB1= -35mA
IB2=35mA, VCC~_ -10V
ns
www.rohm.com
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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