2SA2093_11 Datasheet, PDF (2/4 Pages) Rohm – Power transistor (-60V, -2A)

2SA2093
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Condition
Collector-emitter breakdown voltage BVCEO
−60
−
−
V
IC= −1mA
Collector-base breakdown voltage BVCBO
−60
−
−
V
IC= −100μA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V
IE= −100μA
Collector cut-off current
ICBO
−
−
−1.0
μA
VCB= −40V
Emitter cut-off current
IEBO
−
−
−1.0
μA
VEB= −4V
Collector-emitter saturation voltage VCE (sat)
−
−200 −500
mV
IC= −1.0A
IB= −100mA
DC current gain
Transition frequency
hFE
120
−
390
−
VCE= −2V
IC= −100mA
VCE= −10V
∗
fT
−
310
−
MHz IE=100mA
f=10MHz
Corrector output capacitance
VCB= −10V
Cob
−
25
−
pF
IE=0mA
Turn-on time
Storage time
Fall time
f=1MHz
Ton
−
25
−
ns
IC= −2.0A
∗
Tstg
−
120
−
ns
IB1= −200mA
IB2=200mA
Tf
−
30
−
ns
VCC −25V
∗Single non repetitive pulse
hFE RANK
Q
120−270
R
180−390
Data Sheet
Electrical characteristic curves
−10
VCE= −2V
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−0.01
0
−0.5
−1
−1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter
Propagation Characteristics
1000
100
10
Ta=25°C
VCE= −5V
VCE= −3V
VCE= −2V
1
−0.001 −0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.2 DC Current Gain vs.
Collector Current (Ι)
1000
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
VCE= −2V
1
−0.001 −0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (ΙΙ)
−10
−1
−0.1
IC / IB=20/1
IC / IB=10/1
Ta=25°C
−0.01
−0.001 −0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
−10
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
IC / IB=10 / 1
−0.01
−0.001 −0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
−10
IC / IB=10 / 1
−1
Ta=125°C
Ta=25°C
−0.1
Ta= −40°C
−0.01
−0.001 −0.01
−0.1
−1
−10
COLLECTOR CURRENT : IC (A)
Fig.6 Base-Emitter Saturation
Voltage vs. Collecter Current
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2011.03 - Rev.B