2SA2088 Datasheet, PDF (2/4 Pages) Rohm – Medium power transistor (-60V, -0.5A)

Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
Collector-emitter saturation voltage VCE (sat)
DC current gain
hFE
Transition frequency
fT
Corrector output capacitance
Cob
Turn-on time
Ton
Storage time
Tstg
Fall time
Tf
∗1 Non repetitive pulse
∗2 See Switching charactaristics measurement circuits
Min.
−60
−60
−6
−
−
−
120
−
−
−
−
−
Typ.
−
−
−
−
−
−150
−
400
10
40
110
60
Max.
−
−
−
−1.0
−1.0
−300
270
−
−
−
−
−
Unit
V
V
V
µA
µA
mV
−
MHz
pF
ns
ns
ns
Condition
IC= −1mA
IC= −100µA
IE= −100µA
VCB= −40V
VEB= −4V
IC= −100mA
IB= −10mA
VCE= −2V
IC= −50mA
VCE= −10V
IE=100mA
f=10MHz
VCB= −10V
IE=0A
f=1MHz
IC= −500mA
IB1= −50mA
IB2=50mA
VCC −25V
2SA2088
∗1
∗2
!hFE RANK
Q
120−270
!Electrical characteristic curves
−10
500µs
−1
100ms
−0.1
10ms
1ms
DC
−0.01
Single
non repetitive
−0.001 ^Pulsed
−0.1
−1
−10
−100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Safe Operating Area
1000
Ta=25°C
1000
100
Ta=25°C
VCC= −25V
IC / IB=10 / 1
Tstg
Tf
Ton
10
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
Fig.2 Switching Time
−10
IC / IB=10 / 1
1000
VCE= −2V
100
Ta=125°C
Ta=25°C
Ta= −40°C
10
−0.001
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
Fig.3 DC Current Gain vs.
Collector Current (Ι)
−10
Ta=25°C
100
VCE= −5V
VCE= −3V
VCE= −2V
−1
Ta=125°C
Ta=25°C
Ta= −40°C
−0.1
−1
−0.1
IC / IB=100/1
IC / IB=20/1
IC / IB=10/1
10
−0.001
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
Fig.4 DC Current Gain vs.
Collector Current (ΙΙ)
−0.01
−0.001
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-Emitter Saturation
Voltage vs. Collector Current (Ι)
−0.01
−0.001
−0.01
−0.1
−1
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-Emitter Saturation
Voltage vs. Collector Current (ΙΙ)
2/3