2SA2071P5 Datasheet, PDF (2/10 Pages) Rohm – Power transistor (-60V, -3A)

2SA2071P5
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　 　 　 　 　 　 　 　 _Datasheet
lAbsolute maximum ratings (T_a = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
Values
Unit
V_CBO
-60
V
V_CEO
-60
V
V_EBO
-6
V
I_C
-3
A
I_CP*1
-6
A
P_D*2
0.5
W
P_D*3
2.0
W
T_j
150
℃
T_stg
-55 to +150
℃
lElectrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BV_CBO I_C = -100μA
-60 -
-
V
Collector-emitter breakdown
voltage
BV_CEO I_C = -1mA
-60 -
-
V
Emitter-base breakdown voltage BV_EBO I_E = -100μA
-6
-
-
V
Collector cut-off current
I_CBO V_CB = -40V
-
- -1.0 μA
Emitter cut-off current
I_EBO V_EB = -4V
-
- -1.0 μA
Collector-emitter saturation voltage _VCE(sat)*4 I_C = -2A, I_B = -0.2A
- -200 -500 mV
DC current gain
h_FE V_CE = -2V, I_C = -100mA 120 - 270 -
Transition frequency
f
*4
T
V_CE = -10V, I_E = 100mA,
f = 10MHz
-
180
-
MHz
Output capacitance
C_ob
V_CB = -10V, I_E = 0A,
f = 1MHz
-
50
-
pF
Turn-On time
Storage time
Fall time
t_on ^{IC = -3A,}
I_B1 = -300mA,
t_stg
I_B2 = 300mA,
V_CC ⋍ -25V,
t_f
R_L = 8.3Ω
See test circuit
-
20
-
ns
- 150 -
ns
-
20
-
ns
　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　　　 　 　 　
hFE values are calssified as follows :
　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　
rank
Q
-
-
-
-
h_FE
120-270
-
-
-
-
*1 Pw≦10μs duty≦10%
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board.(40×40×0.7mm)
*4 Pulsed
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
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20150817 - Rev.001