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2SA2029_13 Datasheet, PDF (2/13 Pages) Rohm – PNP -150mA -50V General Purpose Transistors
2SA2029 / 2SA1774EB / 2SA1774 / 2SA1576UB / 2SA1576A / 2SA1037AK
Data Sheet
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
2SA2029
2SA1774EB
2SA1774
2SA1576UB
2SA1576A
2SA1037AK
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
ICP *1
IC
PD *2
Tj
Tstg
Values
Unit
-60
V
-50
V
-6
V
-200
mA
-150
mA
150
mW
200
mW
150
°C
-55 to +150
°C
lElectrical characteristics(Ta = 25C)
Parameter
Symbol
Conditions
Min.
Collector-emitter
breakdown voltage
BVCEO IC = -1mA
-50
Collector-base
breakdown voltage
BVCBO IC = -50mA
-60
Emitter-base
breakdown voltage
BVEBO IE = -50mA
-6
Collector cut-off current
ICBO VCB = -60V
-
Emitter cut-off current
IEBO VEB = -6V
-
Collector-emitter
saturation voltage
VCE(sat) IC = -50mA, IB = -5mA -
DC current gain
hFE VCE = -6V, IC = -1mA 120
Transition frequency
fT
VCE = -12V, IE = 2mA
f=100MHZ
-
Output capacitance
Cob
VCB = -12V, IE = 0mA
f = 1MHz
-
*1 PW=10ms Single Pulse
*2 Each terminal mounted on a reference footprint
Typ.
-
-
-
-
-
-
-
140
4.0
Max. Unit
-
V
-
V
-
V
-100 nA
-100 nA
-0.5
V
560
-
-
MHz
5.0
pF
lhFE rank categories
Rank
Q
hFE
120 to 270
R
180 to 390
S
270 to 560
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2013.05 - Rev.A