2SA1952_1 Datasheet, PDF (2/3 Pages) Rohm – High-speed Switching Transistor (−60V, −5A)

Transistors
2SA1952
zElectrical characteristics curves
−5
−^90m−^A80mA
−70mA ^{Tc =25°C}
−60mA
−4
−50mA
−3
−40mA
−30mA
−2
−20mA
−1
−10mA
0
IB=0A
0
−1
−2
−3
−4
−5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
−10
−5 Ta=100°C
25°C
−2
−25°C
−1
−0.5
VCE= −2V
Pulsed
−0.2
−0.1
−0.05
−0.02
−0.01
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics
1000
VCE= −2V
500
Pulsed
200
100
50
Ta=100°C
25°C
20
−25°C
10
5
2
1
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current
−10
−5
Ta= −25°C
−2
25°C
−1
100°C
−0.5
IC/IB=20
Pulsed
VBE(sat)
−0.2
−0.1
−0.05
VCE(sat)
Ta=100°C
−0.02
25°C
−0.01
−25°C
−0.01 −0.02 −0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10
COLLECTOR CURRENT : IC (A)
Fig.4
Collector-emitter saturation voltage
Base-emitter saturation voltage
vs.
collector
current
1000
Ta=25°C
500
VCE= −10A
200
100
50
20
10
5
2
1
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1
EMITTER CURRENT : IE (A)
Fig.5 Resistance ratio vs. emitter current
10000
Ta=25°C
5000
f=1MHz
IE=0A
2000
1000
500
200
100
50
20
10
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
10
5
2 ^tstg
ton
1
tf
0.5
IE=20IB1= −20IB2
0.2
0.1
0.05
0.02
0.01
−0.05 −0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50
COLLECTOR CURRENT : IC (A)
Fig.7 Switching characteristics
Rev.A
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