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| SCT3160KL Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3160KL
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
140
Ta = 25ºC
120
ID=5A
VGS = 18V/0V
100
RG=0ï
L=750ïH
80
Eon
60
40
20
Eoff
0
200
400
600
800
1000
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
560
Ta = 25ºC
480 VDD=600V
VGS = 18V/0V
400
RG=0ï
L=750ïH
320
240
Eon
160
80
Eoff
0
0 2 4 6 8 10 12 14 16 18 20
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
560
480
Ta = 25ºC
VDD=600V
ID=5A
400
VGS = 18V/0V
L=750ïH
320
240
160
Eon
80
0
0
Eoff
5 10 15 20 25 30
External Gate Resistance : RG [ï]
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
10/12
2017.08 - Rev.C
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