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| SCT3022KL Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3022KL
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
1400
Ta = 25ºC
1200
ID=36A
VGS = 18V/0V
1000
RG=0ï
L=250ïH
Eon
800
600
Eoff
400
200
0
200
400
600
800
1000
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
5600
4800
4000
Ta = 25ºC
VDD=600V
VGS = 18V/0V
RG=0ï
L=250ïH
3200
2400
Eon
1600
800
0
0
Eoff
20
40
60
80 100
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
5600
4800
4000
Ta = 25ºC
VDD=600V
ID=36A
VGS = 18V/0V
L=250ïH
3200
Eon
2400
1600
Eoff
800
0
0
5 10 15 20 25 30
External Gate Resistance : RG [ï]
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© 2016 ROHM Co., Ltd. All rights reserved.
10/12
2017.08 - Rev.C
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