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| SCT3017AL Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3017AL
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
650
600
Ta = 25ºC
550
ID=47A
500
450
VGS = 18V/0V
RG=0ï
L=250ïH
Eon
400
350
300
250
Eoff
200
150
100
50
0
100
200
300
400
500
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
2600
2400
2200
2000
1800
1600
Ta = 25ºC
VDD=300V
VGS = 18V/0V
RG=0ï
L=250ïH
1400
1200
Eon
1000
Eoff
800
600
400
200
0
0
20 40 60 80 100 120
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
2600
2400
2200
Ta = 25ºC
VDD=300V
2000
ID=47A
1800
VGS = 18V/0V
L=250ïH
1600
Eon
1400
1200
Eoff
1000
800
600
400
200
0
0
5 10 15 20 25 30
External Gate Resistance : RG [ï]
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© 2016 ROHM Co., Ltd. All rights reserved.
10/12
2017.08 - Rev.C
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