BD95820F-LB Datasheet, PDF (10/15 Pages) Rohm – Wide Operating Temperature Range

BD95820F-LB BD95820N-LB
Datasheet
Operational Notes – continued
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Figure 11. Example of monolithic IC structure
13. Input Resistance R_IN
Input resistance RIN sets it in less than 3kΩ.
The input bias current to IN terminal increases at the time of the power supply start before reaching the operating
power supply range, and when input resistance is louder than 3kΩ, the voltage between the input terminals becomes
larger than trip voltage, and may malfunction.
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TSZ22111・15・001
10/12
TSZ02201-0RCR0GZ00120-1-2
2014.06.13 Rev.001