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ZDX130N50 Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET | |||
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Data Sheet
10V Drive Nch MOSFET
ZDX130N50
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) High-speed switching.
3) Gate-source voltage
VGSS guaranteed to be ±30V .
4) High package power.
ï¬ Application
Switching
ï¬ Dimensions (Unit : mm)
TO-220FM
10.0
Ï3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54
0.75
2.6
((11)) ((22)) ((33))
ï¬ Packaging specifications
Package
Bulk
Type Code
-
Basic ordering unit (pieces) 500
ZDX130N50
ï¡
ï¬ Inner circuit
â1
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
Range of storage temperature
VDSS
500
V
VGSS
ï±30
V
ID
ï±13
A
IDP *1
ï±39
A
IS
13
A
ISP *1
39
A
IAS *3
10
A
EAS *3
50
mJ
PD *2
40
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Tc=25°C
*3 L 1mH, VDD=50V, RG=25ï Starting Tch=25°C
ï¬ Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c)
Limits
3.125
Unit
ï°C / W
(1) Gate
(2) Drain
(3) Source
(1)
(2)
(3)
ïª1 Body Diode
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.08- Rev.A
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