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ZDS020N60 Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOSFET | |||
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Data Sheet
10V Drive Nch MOSFET
ZDS020N60
ï¬ Structure
Silicon N-channel MOSFET
ï¬Features
1) Low on-resistance.
2) High-speed switching.
3) Wide SOA.
ï¬ Dimensions (Unit : mm)
SOP8
(8)
(5)
(1)
(4)
ï¬ Application
Switching
ï¬ Packaging specifications
Package
Type Code
Basic ordering unit (pieces)
ZDS020N60
Taping
TB
2500
ï¡
ï¬ Absolute maximum ratings (Ta = 25ï°C)
Parameter
Symbol Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Source current
(Body Diode)
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
VDSS
600
V
VGSS
ï±30
V
ID
ï±0.63
A
IDP *1
ï±2.5
A
IS
0.63
A
ISP *1
2.5
A
PD *2
2
W
Tch
150
ï°C
Tstg ï55 to ï«150 ï°C
*1 Pwï£10ïs, Duty cycleï£1%
*2 Mounted on a ceramic board.
ï¬ Inner circuit
(8)
(7)
(6)
(5)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
â1
(1)
(2)
(3)
(4)
ïª1 BODY DIODE
ï¬ Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a*)
Limits
62.5
Unit
ï°C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.08 - Rev.A
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