VT6Z2 Datasheet, PDF (1/5 Pages) Rohm – Power management (dual transistors)

Power management (dual transistors)
VT6Z2
zStructure
Silicon epitaxial planar transistor
zFeatures
Very small package with two transistors.
zApplications
Switch, LED driver
zPackaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
VT6Z2
Taping
T2R
8000
z Absolute maximum ratings (Ta=25°C)
<Tr1> (PNP)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
∗1 Pw=1mS Single pulse
IC
−100
mA
ICP ^∗1 −200
mA
<Tr2> (NPN)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
∗1 Pw=1mS Single pulse
IC
100
mA
ICP ^∗1
200
mA
zDimensions (Unit : mm)
VMT6
1.2 ± 0.1
(6) (5) (4)
0.5 ± 0.1
0 ~ 0.05
(1) (2) (3)
0.16 ± 0.05
0.4 0.4
0.13 ± 0.05
0.8 ± 0.1
Abbreviated symbol : Z2
Each lead has same dimensions.
UNIT : mm
zInner circuit
(6) (5) (4)
Tr1
(1) (2)
(1) Emitter (Tr1)
Tr2
(2) Base (Tr1)
(3) Collector (Tr2)
(4) Emitter (Tr2)
(5) Base (Tr2)
(3) (6) Collector (Tr1)
<Tr1 and Tr2>
Parameter
Symbol
Total
Power dissipation
Element
PD ^∗2
Limits
150
120
Junction temperature
Tj
150
Storage temperature
Tstg −55 to +150
∗2 Each terminal mounted on a recommended land
Unit
mW
mW
°C
°C
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2009.10 - Rev.A