VT6Z1 Datasheet, PDF (1/5 Pages) Rohm – Power management (dual transistors)

Power management (dual transistors)
VT6Z1
zStructure
Silicon epitaxial planar transistor
zFeatures
Very small package with two transistors.
zApplications
Switch, LED driver
zPackaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
VT6Z1
Taping
T2R
8000
z Absolute maximum ratings (Ta=25°C)
<Tr1> (PNP)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage VCEO
−20
V
Emitter-base voltage
VEBO
−5
V
Collector current
∗1 Pw=1mS Single pulse
IC
−200
mA
ICP ^∗1 −400
mA
<Tr2> (NPN)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
∗1 Pw=1mS Single pulse
IC
200
mA
ICP ^∗1
400
mA
zDimensions (Unit : mm)
VMT6
1.2 ± 0.1
(6) (5) (4)
0.5 ± 0.1
0 ~ 0.05
(1) (2) (3)
0.16 ± 0.05
0.4 0.4
0.13 ± 0.05
0.8 ± 0.1
Abbreviated symbol : Z1
Each lead has same dimensions.
UNIT : mm
zInner circuit
(6) (5) (4)
Tr1
(1) (2)
(1) Emitter (Tr1)
Tr2
(2) Base (Tr1)
(3) Collector (Tr2)
(4) Emitter (Tr2)
(5) Base (Tr2)
(3) (6) Collector (Tr1)
<Tr1 and Tr2>
Parameter
Symbol Limits
Unit
Total
Power dissipation
PD ^∗2
150
mW
Element
120
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗2 Each terminal mounted on a recommended land
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2009.06 - Rev.A