VT6X2 Datasheet, PDF (1/3 Pages) Rohm – Power management (dual transistors)

Power management (dual transistors)
VT6X2
zStructure
NPN silicon epitaxial planar transistor
zFeatures
1) Very small package with two transistors.
zApplications
Switch, LED driver
zPackaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
VT6X2
Taping
T2R
8000
z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
ICP ^∗1
200
mA
Total
Power dissipation
PD ^∗2
150
mW
Element
120
mW
Junction temperature
Tj
150
°C
Range of storage temperature Tstg −55 to +150
°C
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
zDimensions (Unit : mm)
VMT6
1.2 ± 0.1
(6) (5) (4)
0.5 ± 0.1
0 ~ 0.05
(1) (2) (3)
0.16 ± 0.05
0.4 0.4
0.13 ± 0.05
0.8 ± 0.1
Abbreviated symbol : X2
Each lead has same dimensions.
UNIT : mm
zInner circuit
(6) (5) (4)
Tr1
(1) (2)
(1) Emitter (Tr1)
Tr2
(2) Base (Tr1)
(3) Collector (Tr2)
(4) Emitter (Tr2)
(5) Base (Tr2)
(3) (6) Collector (Tr1)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
50
−
−
V IC=1mA
50
−
−
V IC=50µA
5
−
−
V IE=50µA
−
−
0.1 µA VCB=50V
−
−
0.1 µA VEB=5V
− 0.10 0.30 V IC=50mA, IB=5mA
120
−
560
− VCE=6V, IC=1mA
− 350 − MHz VCE=10V, IE=−10mA, f=100MHz
−
1.6
−
pF VCB=10V, IE=0A, f=1MHz
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2009.10 - Rev.A