VT6X1 Datasheet, PDF (1/3 Pages) Rohm – Power management (dual transistors)

Power management (dual transistors)
VT6X1
zStructure
NPN silicon epitaxial planar transistor
zFeatures
Very small package with two transistors.
zApplications
Switch, LED driver
zPackaging specifications
Type
VT6X1
Package
Code
Basic ordering
unit (pieces)
Taping
T2R
8000
z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
200
mA
ICP ^∗1
400
mA
Total
Power dissipation
PD ^∗2
150
mW
Element
120
mW
Junction temperature
Tj
150
°C
Range of storage temperature Tstg −55 to +150
°C
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
zDimensions (Unit : mm)
VMT6
1.2 ± 0.1
(6) (5) (4)
0.5 ± 0.1
0 ~ 0.05
(1) (2) (3)
0.16 ± 0.05
0.4 0.4
0.13 ± 0.05
0.8 ± 0.1
Abbreviated symbol : X1
Each lead has same dimensions.
UNIT : mm
zInner circuit
(6) (5) (4)
Tr1
(1) (2)
(1) Emitter (Tr1)
Tr2
(2) Base (Tr1)
(3) Collector (Tr2)
(4) Emitter (Tr2)
(5) Base (Tr2)
(3) (6) Collector (Tr1)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
20
−
−
V IC=1mA
20
−
−
V IC=50µA
5
−
−
V IE=50µA
−
−
0.1 µA VCB=20V
−
−
0.1 µA VEB=5V
− 0.12 0.30 V IC=100mA, IB=10mA
120
−
560
− VCE=2V, IC=1mA
− 400 − MHz VCE=10V, IE=−10mA, f=100MHz
−
2
−
pF VCB=10V, IE=0A, f=1MHz
www.rohm.com
1/2
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A