VT6T12 Datasheet, PDF (1/3 Pages) Rohm – Power management (dual transistors)

Power management (dual transistors)
VT6T12
zStructure
PNP silicon epitaxial planar transistor
zFeatures
1) Very small package with two transistors.
2) Suitable for current mirror circuits.
zApplications
Current mirror circuits
zPackaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
VT6T12
Taping
T2R
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−100
mA
ICP ^∗1 −200
mA
Power dissipation
Total
PD ^∗2
150
mW
Element
120
mW
Junction temperature
Tj
150
°C
Range of storage temperature Tstg −55 to +150
°C
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
zDimensions (Unit : mm)
VMT6
1.2 ± 0.1
(6) (5) (4)
0.5 ± 0.1
0 ~ 0.05
(1) (2) (3)
0.16 ± 0.05
0.4 0.4
0.13 ± 0.05
0.8 ± 0.1
Abbreviated symbol : T12
Each lead has same dimensions.
UNIT : mm
zinner circuit
(6) (5) (4)
Tr2
Tr1
(1) (2) (3)
(1) Base
(2) Emitter
(3) Emitter
(4) Collector
(5) Collector
(5) Base
(6) Collector
(6) Base
(Tr1)
(Tr1)
(Tr2)
(Tr2)
(Tr1)
(Tr2)
(Tr1)
(Tr2)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
DC current gain ratio
Transition frequency
Output capacitance
Symbol Min.
BVCEO
−50
BVCBO
−50
BVEBO
−5
ICBO
−
IEBO
−
VCE(sat)
hFE
−
120
hFE (Tr1) / hFE (Tr2) 0.9
fT
−
Cob
−
Typ.
−
−
−
−
−
−0.15
−
−
300
2
Max.
−
−
−
−0.1
−0.1
−0.40
560
1.1
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
Conditions
IC= −1mA
IC= −50µA
IE= −50µA
VCB= −50V
VEB= −5V
IC= −50mA, IB= −5mA
VCE= −6V, IC= −1mA
VCE= −6V, IC= −1mA
VCE= −10V, IE=10mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
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2009.09 - Rev.A