VT6T1 Datasheet, PDF (1/3 Pages) Rohm – Power management (dual transistors)

Power management (dual transistors)
VT6T1
zStructure
PNP silicon epitaxial planar transistor
zFeatures
Very small package with two transistors.
zApplications
Switch, LED driver
zPackaging specifications
Package
Code
Type
Basic ordering
unit (pieces)
VT6T1
Taping
T2R
8000
z Absolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage VCEO
−20
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−200
mA
ICP ^∗1 −400
mA
Total
Power dissipation
PD ^∗2
150
mW
Element
120
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Pw=1mS Single pulse
∗2 Each terminal mounted on a recommended land
zDimensions (Unit : mm)
VMT6
1.2 ± 0.1
(6) (5) (4)
0.5 ± 0.1
0 ~ 0.05
(1) (2) (3)
0.16 ± 0.05
0.4 0.4
0.13 ± 0.05
0.8 ± 0.1
Abbreviated symbol : T1
Each lead has same dimensions.
zInner circuit
UNIT : mm
(6) (5) (4)
Tr1
(1) (2)
(1) Emitter (Tr1)
Tr2
(2) Base (Tr1)
(3) Collector (Tr2)
(4) Emitter (Tr2)
(5) Base (Tr2)
(3) (6) Collector (Tr1)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Output capacitance
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−20 −
−
V IC= −1mA
−20 −
−
V IC= −50µA
−5
−
−
V IE= −50µA
−
− −0.1 µA VCB= −20V
−
− −0.1 µA VEB= −5V
− −0.12 −0.30 V IC= −100mA, IB= −10mA
120
−
560
− VCE= −2V, IC= −1mA
− 350 − MHz VCE= −10V, IE=10mA, f=100MHz
−
3
−
pF VCB= −10V, IE=0A, f=1MHz
www.rohm.com
1/2
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.06 - Rev.A