US6U37 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Nch+SBD MOSFET

Transistors
2.5V Drive Nch+SBD MOSFET
US6U37
US6U37
zStructure
Silicon N-channel MOSFET /
Schottky barrier diode
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Nch MOSFET and schottky barrier diode
are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.
Abbreviated symbol : U37
zApplications
Switching
zPackage specifications
Type
US6U37
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
Channel temperature
Tch
Power dissipation
PD ^∗2
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
<Di>
Parameter
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power dissipation
∗1 60Hz 1cycle
∗2 Mounted on ceramic board
Symbol
VRM
VR
IF
IFSM ^∗1
Tj
PD ^∗2
Limits
30
±12
±1.5
±6.0
0.6
6.0
150
0.7
Limits
25
20
0.7
10
150
0.5
zInner circuit
(6)
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3)Cathode
(3)
(4)Anode
(5)Anode
(6)Drain
Unit
V
V
A
A
A
A
°C
W / ELEMENT
Unit
V
V
A
A
°C
W / ELEMENT
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