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US6T9_1 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (−30V, −1A) | |||
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Transistors
US6T9
General purpose amplification (â30V, â1A)
US6T9
zApplication
Low frequency amplifier
Driver
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ⤠â350mV
At IC = â500mA / IB = â25mA
zDimensions (Unit : mm)
ROHM : TUMT6 Abbreviated symbol : T09
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
â30
Collector-emitter voltage
Emitter-base voltage
VCEO
â30
VEBO
â6
Collector current
IC
â1
ICP
â2
400
Power dissipation
PC
1.0
0.7
Junction temperature
Tj
150
Range of storage temperature Tstg â55 to +150
â1 Single pulse, PW=1ms
â2 Each Terminal Mounted on a Recommended
â3 Mounted on a 25mmÃ25mmà t 0.8mm Ceramic substrate
Unit
V
V
V
A
A
â1
mW/TOTAL â2
W/TOTAL â3
WELEMENT â3
°C
°C
zEquivalent circuit
(6)
(5)
(4)
(1)
(2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
â Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
â30
â
â
V IC=â10µA
â30
â
â
V IC=â1mA
â6
â
â
V IE=â10µA
â
â
â100 nA VCB=â30V
â
â
â100 nA VEB=â6V
â
â150 â350 mV IC=â500mA, IB=â25mA
270
â
680
â VCE=â2V, IC=â100mA â
â
320
â
MHz VCE=â2V, IE=100mA, f=100MHz â
â
7
â
pF VCB=â10V, IE=0A, f=1MHz
Rev.B
1/2
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