US6T9 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (-30V, -1A)

Transistors
US6T9
General purpose amplification (−30V, −1A)
US6T9
zApplication
Low frequency amplifier
Driver
zFeatures
1) Collector current is large.
2) Collector saturation voltage is low.
VCE(sat) ≤ −350mV
At IC = −500mA / IB = −25mA
zExternal dimensions (Unit : mm)
(4)
(3)
(5)
(2)
(6)
(1)
0.2
1.7
0.2
2.1
1pin mark
0.15Max.
ROHM : TUMT6 Abbreviated symbol : T09
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
Emitter-base voltage
VCEO
−30
VEBO
−6
Collector current
IC
−1
ICP
−2
400
Power dissipation
PC
1.0
0.7
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate
Unit
V
V
V
A
A
∗1
mW/TOTAL ∗2
W/TOTAL ∗3
WELEMENT ∗3
°C
°C
zEquivalent circuit
(6)
(5)
(4)
(1)
(2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−30
−
−
V IC=−10µA
−30
−
−
V IC=−1mA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−30V
−
−
−100 nA VEB=−6V
−
−150 −350 mV IC=−500mA, IB=−25mA
270
−
680
− VCE=−2V, IC=−100mA ^∗
−
320
−
MHz VCE=−2V, IE=100mA, f=100MHz ^∗
−
7
−
pF VCB=−10V, IE=0A, f=1MHz
Rev.A
1/2