US6T8_1 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (−12V, −1.5A)

Transistors
US6T8
General purpose amplification (−12V, −1.5A)
US6T8
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) ≤ ^−200mV
At IC = ^−500mA / IB = ^−25mA
zDimensions (Unit : mm)
ROHM : TUMT6 Abbreviated symbol : T08
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
Collector-emitter voltage
VCBO
−15
VCEO
−12
Emitter-base voltage
Collector current
VEBO
IC
ICP
−6
−1.5
−3
400
Power dissipation
PC
1.0
0.7
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, Pw=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate
Unit
V
V
V
A
A
∗1
mW/TOTAL ^∗2
W/TOTAL ^∗3
W/ELEMENT ^∗3
°C
°C
zEquivalent circuit
(6) (5) (4)
(1) (2) (3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
∗Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−15
−
−
V IC= −10µA
−12
−
−
V IC= −1mA
−6
−
−
V IE= −10µA
−
− −100 nA VCB= −15V
−
−
−100 nA VEB= −6V
−
−85 −200 mV IC= −500mA, IB= −25mA
270
−
680
− VCE= −2V, IC= −200mA ^∗
−
400
−
MHz VCE= −2V, IE=200mA, f=100MHz ^∗
−
12
−
pF VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2