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US6T8 Datasheet, PDF (1/3 Pages) Rohm – General purpose amplification (−12V, −1.5A) | |||
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Transistors
US6T8
General purpose amplification (â12V, â1.5A)
US6T8
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) ⤠â200mV
At IC = â500mA / IB = â25mA
zExternal dimensions (Unit : mm)
(4)
(3)
(5)
(2)
(6)
(1)
0.2
1.7
0.2
2.1
1pin mark
0.15Max.
ROHM : TUMT6 Abbreviated symbol : T08
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
â15
Collector-emitter voltage
Emitter-base voltage
Collector current
VCEO
VEBO
IC
ICP
â12
â6
â1.5
â3
400
Power dissipation
PC
1.0
0.7
Junction temperature
Tj
150
Range of storage temperature Tstg â55 to +150
â1 Single pulse, Pw=1ms
â2 Each Terminal Mounted on a Recommended
â3 Mounted on a 25mmÃ25mmà t 0.8mm Ceramic substrate
Unit
V
V
V
A
A
â1
mW/TOTAL â2
W/TOTAL â3
W/ELEMENT â3
°C
°C
zEquivalent circuit
(6) (5) (4)
(1) (2) (3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
âPulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
â15
â
â
V IC= â10µA
â12
â
â
V IC= â1mA
â6
â
â
V IE= â10µA
â
â â100 nA VCB= â15V
â
â
â100 nA VEB= â6V
â
â85 â200 mV IC= â500mA, IB= â25mA
270
â
680
â VCE= â2V, IC= â200mA â
â
400
â
MHz VCE= â2V, IE=200mA, f=100MHz â
â
12
â
pF VCB= â10V, IE=0A, f=1MHz
Rev.A
1/2
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