US6T7_1 Datasheet, PDF (1/3 Pages) Rohm – Low frequency amplifier (-30V, -1.5A)

Transistors
US6T7
Low frequency amplifier (-30V, -1.5A)
US6T7
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) : max. −370mV
At IC = − 1A / IB = −50mA
zDimensions (Unit : mm)
ROHM : TUMT6 Abbreviated symbol : T07
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
−30
−6
Collector current
IC
−1.5
ICP
−3
Power dissipation
400
PC
1.0
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Each Terminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate
Unit
V
V
V
A
A ^∗1
mW ^∗2
W ^∗3
°C
°C
zEquivalent circuit
(6) (5)
(4)
(1) (2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−30
−
−
V IC=−10µA
−30
−
−
V IC=−1mA
−6
−
−
V IE=−10µA
−
−
−100 nA VCB=−30V
−
−
−100 nA VEB=−6V
−
−190 −370 mV IC=−1A, IB=−50mA
270
−
680
− VCE=−2V, IC=−100mA ^∗
−
280
−
MHz VCE=−2V, IE=100mA, f=100MHz ^∗
−
13
−
pF VCB=−10V, IE=0A, f=1MHz
Rev.B
1/2