US6T5 Datasheet, PDF (1/3 Pages) Rohm – Low frequency amplifier

Transistors
Low frequency amplifier
US6T5
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V_CE(sat) : max. −370mV
At lc= −1.5A / l_B= −75mA
zExternal dimensions (Unit : mm)
(4)
(3)
(5)
(2)
(6)
(1)
0.2
1.7
0.2
2.1
1pin mark
ROHM : TUMT6
0.15Max.
Abbreviated symbol : T05
US6T5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−30
Collector-emitter voltage
VCEO
−30
Emitter-base voltage
VEBO
−6
Collector current
IC
−2
ICP
−4
Power dissipation
PC
400
1.0
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, Pw=1ms
∗2 Each terminal mounted on a recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate.
Unit
V
V
V
A
A ^∗1
mW ^∗2
W ^∗3
°C
°C
zEquivalent circuit
(6) (5)
(4)
(1) (2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff curent
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
−30
−
−
V IC= −10µA
−30
−
−
V IC= −1mA
−6
−
−
V IE= −10µA
−
−
−100 nA VCB= −30V
−
−
−100 nA VEB= −6V
−
−180 −370 mV IC= −1.5A, IB= −75mA
270
−
680
− VCE= −2V, IC= −200mA
−
280
−
MHz VCE= −2V, IE=200mA, f=100MHz
−
20
−
pF VCB= −10V, IE=0A, f=1MHz
Rev.A
1/2