US6T4_1 Datasheet, PDF (1/3 Pages) Rohm – Low frequency amplifier

Transistors
Low frequency amplifier
US6T4
US6T4
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) VCE(sat) : max. −250mV
At IC=−1.5A / IB=−30mA
zDimensions (Unit : mm)
ROHM : TUMT6 Abbreviated symbol : T04
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Collector-base voltage
VCBO
−15
Collector-emitter voltage
VCEO
−12
Emitter-base voltage
VEBO
−6
Collector current
IC
−3
ICP
−6
Power dissipation
PC
400
1.0
Junction temperature
Tj
150
Range of storage temperature Tstg −55 to +150
∗1 Single pulse, PW=1ms
∗2 Each Termminal Mounted on a Recommended
∗3 Mounted on a 25mm×25mm× ^t 0.8mm Ceramic substrate.
Unit
V
V
V
A
A ^∗1
mW ^∗2
W ^∗3
°C
°C
zEquivalent circuit
(6) (5)
(4)
(1) (2)
(3)
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO −15
Collector-emitter breakdown voltage BVCEO −12
Emitter-base breakdown voltage
BVEBO
−6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat)
−
DC current gain
hFE
270
Transition frequency
fT
−
Collector output capacitance
Cob
−
∗ Pulsed
Typ.
−
−
−
−
−
−120
−
280
30
Max.
−
−
−
−100
−100
−250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC= −10µA
IC= −1mA
IE= −10µA
VCB= −15V
VEB= −6V
IC= −1.5A, IB= −30mA
VCE= −2V, IC= −500mA ^∗
VCE= −2V, IE=500mA, f=100MHz ^∗
VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2