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US6M2_07 Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch+Pch MOSFET | |||
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Transistors
2.5V Drive Nch+Pch MOSFET
US6M2
US6M2
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) High-speed switching, low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M02
zApplications
Switching
zPackaging specifications
Type
US6M2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
PD â2
Tch
Tstg
zInner circuit
(6)
(5)
(4)
â1
â2
â2
â1
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(1)
(2)
(3) Tr2 (Pch) Drain
(3) (4) Tr2 (Pch) Source
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Limits
Unit
Tr1 : Nchannel Tr2 : Pchannel
30
â20
V
12
â12
V
±1.5
±1
A
±6
±4
A
0.6
â0.4
A
6
â4
A
1.0
W / TOTAL
0.7
W / ELEMENT
150
°C
â55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
Rth(ch-a) â
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
Rev.A
1/3
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