US6M2TR Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch+Pch MOSFET

Transistors
2.5V Drive Nch+Pch MOSFET
US6M2
US6M2
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) High-speed switching, low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M02
zApplications
Switching
zPackaging specifications
Type
US6M2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
zInner circuit
(6)
(5)
(4)
∗1
∗2
∗2
∗1
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(1)
(2)
(3) Tr2 (Pch) Drain
(3) _{(4) Tr2 (Pch) Source}
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
Limits
Unit
Tr1 : Nchannel Tr2 : Pchannel
30
−20
V
12
−12
V
±1.5
±1
A
±6
±4
A
0.6
−0.4
A
6
−4
A
1.0
W / TOTAL
0.7
W / ELEMENT
150
°C
−55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
Rev.A
1/3