US6M2 Datasheet, PDF (1/4 Pages) Rohm – 2.5 Drive Nch+Pch MOS FET

Transistors
2.5V Drive Nch+Pch MOS FET
US6M2
US6M2
Structure
Silicon N-channel MOS FET /
Silicon P-channel MOS FET
Features
1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.
2) High-speed switching, low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in G-S Protection Diode.
External dimensions (Unit : mm)
ÌËÓÌê
îòð
ïòí
ðòêë ðòêë
øê÷ øë÷ øì÷
ðòèëÓ¿¨ò
ðòéé
ð¢ðòï
øï÷ øî÷ øí÷
ðòïé
ðòí
ß¾¾®»ª·¿¬»¼ -§³¾±´ æ Óðî
Applications
Switching
Packaging specifications
̧°»
ËÍêÓî
п½µ¿¹»
ݱ¼»
Þ¿-·½ ±®¼»®·²¹ «²·¬ ø°·»½»-÷
Ì¿°·²¹
ÌÎ
íððð
Absolute maximum ratings (Ta=25 C)
п®¿³»¬»®
Ü®¿·²ó-±«®½» ª±´¬¿¹»
Ù¿¬»ó-±«®½» ª±´¬¿¹»
Ü®¿·² ½«®®»²¬
ͱ«®½» ½«®®»²¬
øÞ±¼§ ¼·±¼»÷
ݱ²¬·²«±«-
Ы´-»¼
ݱ²¬·²«±«-
Ы´-»¼
̱¬¿´ °±©»® ¼·--·°¿¬·±²
ݸ¿²²»´ ¬»³°»®¿¬«®»
ͬ±®¿¹» ¬»³°»®¿¬«®»
ï Щ ïðk-ô Ü«¬§ ½§½´» ïû
î Ó±«²¬»¼ ±² ¿ ½»®¿³·½ ¾±¿®¼ò
ͧ³¾±´
ÊÜÍÍ
ÊÙÍÍ
×Ü
×ÜÐ ^ï
×Í
×ÍÐ ^ï
ÐÜ ^î
̽¸
Ì-¬¹
Inner circuit
øê÷
øë÷
øì÷
ï
î
î
ï
øï÷ Ì®ï øÒ½¸÷ ͱ«®½»
øî÷ Ì®ï øÒ½¸÷ Ù¿¬»
øï÷
øî÷
øí÷ Ì®î øн¸÷ Ü®¿·²
øí÷ _{øì÷ Ì®î øн¸÷ ͱ«®½»}
ï ÛÍÜ ÐÎÑÌÛÝÌ×ÑÒ Ü×ÑÜÛ
î ÞÑÜÇ Ü×ÑÜÛ
øë÷ Ì®î øн¸÷ Ù¿¬»
øê÷ Ì®ï øÒ½¸÷ Ü®¿·²
Ô·³·¬-
Ì®ï æ Ò½¸¿²²»´ Ì®î æ н¸¿²²»´
˲·¬
íð
–îð
Ê
ïî
–ïî
Ê
oïòë
oï
ß
oê
oì
ß
ðòê
–ðòì
ß
ê
–ì
ß
ïòð
É ñ ÌÑÌßÔ
ðòé
É ñ ÛÔÛÓÛÒÌ
ïëð
pÝ
–ëë ¬± õïëð
pÝ
Thermal resistance
п®¿³»¬»®
ݸ¿²²»´ ¬± ¿³¾·»²¬
Ó±«²¬»¼ ±² ¿ ½»®¿³·½ ¾±¿®¼
ͧ³¾±´
ά¸ø½¸ó¿÷
Ô·³·¬-
ïîë
ïéç
˲·¬
pÝñÉ ñ ÌÑÌßÔ
pÝñÉ ñ ÛÔÛÓÛÒÌ
1/3