US6M1_1 Datasheet, PDF (1/8 Pages) Rohm – 4V+2.5V Drive Nch+Nch MOSFET

Transistors
US6M1
4V+2.5V Drive Nch+Nch MOSFET
US6M1
zStructure
Silicon N-channel / P-channel MOSFET
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
zApplication
Power switching, DC / DC converter.
zDimensions (Unit : mm)
TUMT6
Abbreviated symbol : M01
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6M1
Taping
TR
3000
zEquivalent circuit
(6)
(5)
(4)
∗1
∗2
∗2
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
Unit
Tr1 : Nchannel Tr2 : Pchannel
30
−20
V
20
−12
V
±1.4
±1
A
±5.6
±4
A
0.6
−0.4
A
5.6
−4
A
1
W / TOTAL
0.7
W / ELEMENT
150
°C
−55 to +150
°C
zThermal resistance
Parameter
Channel to ambient
∗2 Mounted on a ceramic board.
Symbol
Rth (ch-a)^∗
Limits
125
179
Unit
°C / W /TOTAL
°C / W / ELEMENT
Rev.B
1/7