US6M11_09 Datasheet, PDF (1/8 Pages) Rohm – 1.5V Drive Nch+Pch MOSFET

1.5V Drive Nch+Pch MOSFET
US6M11
zStructure
Silicon N-channel MOSFET /
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Nch MOSFET and Pch MOSFET are put in TUMT6 package.
2) Low on-resistance.
3) Low voltage drive (1.5V drive).
4) Built-in G-S Protection Diode.
Abbreviated symbol : M11
zApplications
Switching
zInner circuit
(6)
(5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6M11
Taping
TR
3000
∗1
∗2
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
PD ^∗2
Tch
Tstg
Limits
Unit
Tr1 : Nchannel Tr2 : Pchannel
20
−12
V
±10
±10
V
±1.5
±1.3
A
±6
±5.2
A
0.5
−0.5
A
6
−5.2
A
1.0
W / TOTAL
0.7
W / ELEMENT
150
°C
−55 to +150
°C
∗2
(1) Tr1 (Nch) Source
(2) Tr1 (Nch) Gate
(3) Tr2 (Pch) Drain
(4) Tr2 (Pch) Source
(5) Tr2 (Pch) Gate
(6) Tr1 (Nch) Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
www.rohm.com
1/7
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.07 - Rev.A