US6K4TR Datasheet, PDF (1/4 Pages) Rohm – 1.8V Drive Nch+Nch MOSFET

Transistors
1.8V Drive Nch+Nch MOSFET
US6K4
US6K4
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Two Nch MOSFETs are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) 1.8V drive.
zApplications
Switching
Abbreviated symbol : K04
zPackaging specifications
Type
US6K4
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
∗1
∗2
∗2
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
Total power dissipation
PD ^∗2
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tch
Tstg
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits
20
±10
±1.5
±3.0
0.6
2.4
1.0
0.7
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
Rev.A
1/3