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US6K2_07 Datasheet, PDF (1/4 Pages) Rohm – 4V Drive Nch+Nch MOSFET | |||
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Transistors
4V Drive Nch+Nch MOSFET
US6K2
US6K2
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Two Nch MOSFETs are put in TUMT6 package.
2) High-speed switching, Low On-resistance.
3) 4V drive.
zApplications
Switching
Abbreviated symbol : K02
zPackaging specifications
Type
US6K2
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP â1
IS
ISP â1
Total power dissipation
PD â2
Channel temperature
Range of storage temperature
â1 Pwâ¤10µs, Duty cycleâ¤1%
â2 Mounted on a ceramic board
Tch
Tstg
zInner circuit
(6)
(5)
(4)
â1
â2
â2
â1
(1) Tr1 Source
(2) Tr1 Gate
(1)
(2)
(3) Tr2 Drain
(3) (4) Tr2 Source
â1 ESD PROTECTION DIODE
â2 BODY DIODE
(5) Tr2 Gate
(6) Tr1 Drain
Limits
30
20
±1.4
±5.6
0.6
5.6
1.0
0.7
150
â55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
â Mounted on a ceramic board
Symbol
Rth(ch-a) â
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
Rev.B
1/3
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