US6K1TR Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch+Nch MOSFET

2.5V Drive Nch+Nch MOSFET
US6K1
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Low On-resistance.
2) Space savingsmall surface mount package (TUMT6).
3) Low voltage drive (2.5V drive).
zApplications
Switching
Abbreviated symbol : K01
zPackaging specifications
Type
US6K1
Package
Code
Basic ordering unit (pieces)
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
∗1
∗2
∗2
∗1
(1) Tr1 Source
(2) Tr1 Gate
(1)
(2)
(3) Tr2 Drain
(3) _{(4) Tr2 Source}
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr2 Gate
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ^∗1
Total power dissipation
PD ^∗2
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
Tch
Tstg
Limits
30
12
±1.5
±6
0.6
6
1.0
0.7
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
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2009.03 - Rev.B