US6J2TR Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Pch+Pch MOSFET

Transistors
2.5V Drive Pch+Pch MOSFET
US6J2
US6J2
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Two Pch MOSFET transistors in a single
TUMT6 package.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (2.5V) makes this device
ideal for portable equipment.
5) Drive circuits can be simple.
zApplications
Switching
Abbreviated symbol : J02
zInner circuit
(6)
(5)
(4)
zPackaging specifications
∗1
Package
Taping
∗2
∗2
Type
Code
TR
US6J2
Basic ordering unit (pieces) 3000
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2>
∗1
(1) Tr1 Source
(2) Tr1 Gate
(1)
(2)
(3) Tr2 Drain
(3) _{(4) Tr2 Source}
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(5) Tr2 Gate
(6) Tr1 Drain
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤50%
∗2 Mounted on a ceramic board
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ∗1
PD ^∗2
Tch
Tstg
Limits
−20
±12
±1
±4
−0.4
−4
1.0
0.7
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
Rev.B 1/4