US6J11_09 Datasheet, PDF (1/5 Pages) Rohm – 1.5V Drive Pch+Pch MOSFET

1.5V Drive Pch+Pch MOSFET
US6J11
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TUMT6
zFeatures
1) Two Pch MOSFET transistors in a single
TUMT6 package.
2) Mounting cost and area can be cut in half.
3) Low on-resistance.
4) Low voltage drive (1.5V) makes this device
ideal for portable equipment.
5) Drive circuits can be simple.
Abbreviated symbol : J11
zApplication
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6J11
Taping
TR
3000
zInner circuit
(6)
(5)
(4)
∗1
∗2
∗2
∗1
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Tr1 Source
(2) Tr1 Gate
(3)
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ^∗1
IS
ISP ∗1
Total power dissipation
PD ^∗2
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
Tch
Tstg
Limits
−12
±10
±1.3
±5.2
−0.5
−5.2
1.0
0.7
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
Symbol
Rth(ch-a) ^∗
Limits
125
179
Unit
°C/W / TOTAL
°C/W / ELEMENT
www.rohm.com
1/4
○^c 2009 ROHM Co., Ltd. All rights reserved.
2009.08 - Rev.A