US6H23 Datasheet, PDF (1/4 Pages) Rohm – Dual digital transistors

Transistors
Dual digital transistors
US6H23
US6H23
zFeatures
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
IC=600mA.
zDimensions (Unit : mm)
TUMT6
zStructure
NPN silicon epitaxial planar transistor
Abbreviated symbol : H23
zPackaging specifications and hFE
Package
TUMT6
Type
Packaging type
Code
Taping
TR
Basic ordering unit (pieces) 3000
US6H23
zEquivalent circuit
(6)
(5)
(4)
R=4.7kΩ R=4.7kΩ
TR1
TR2
(1) : Emitter<<Tr1>>
(2) : Base<<Tr1>>
(3) : Collector<<Tr2>>
(4) : Emitter<<Tr2>>
(1)
(2)
(3)
(5) : Base<<Tr2>>
(6) : Collector<<Tr1>>
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power dissipation
PD
Junction temperature
Tj
Range of storage temperature
Tstg
∗1 Pw=10ms 1 Pulse
∗2 Each terminal mounted on a recommended land
∗3 Mounted on a ceramic board
Limits
20
20
12
600
1
0.4(TOTAL)
1.0(TOTAL)
0.7(ELEMENT)
150
−55 to +150
Unit
V
V
V
mA
A ∗1
W ∗2
W ^∗3
W ^∗3
°C
°C
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