US5U30 Datasheet, PDF (1/5 Pages) Rohm – Small switching (-20V, -1.5A)

Transistor
Small switching (–20V, –1.5A)
US5U30
US5U30
zFeatures
1) The US5U30 conbines Pch MOSFET with a
Schottky barrier diode in a single TSMT5 package.
2) Pch MOSFET have a low on-state resistance
with a fast switching.
3) Pch MOSFET is reacted a low voltage drive(2.5V)
4) The Independently connected Schottky barrier diode
have a low forward voltate.
zApplications
Load switch, DC/DC conversion
zExternal dimensions (Unit : mm)
(4)
(3)
(2)
(5)
(1)
0.2
1.7
0.2
2.1
0.15Max.
Each lead has same dimensions
Abbreviated symbol : U30
zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US5U30
Taping
TR
3000
zAbsolute maximum ratings (Ta=25°C)
< MOSFET >
Parameter
Symbol Limits
Drain−source voltage
VDSS
−20
V
Gate−source voltage
VGSS
±12
V
Drain current
Continuous
Pulsed
ID
±1
A
IDP
±4
A
Source current
(Body diode)
Continuous
Pulsed
IS
−0.4
A
ISP
−4
A
Channel temperature
Tch
150
C
< Di >
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
VRM
25
V
VR
20
V
IF
0.5
A
IFSM
2
A
Tj
150
C
< MOSFET AND Di >
Total power dissipation
PD
1.0
Range of storage temperature
Tstg −55 to 150 C
zEquivalent circuit
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3) (3)Anode
(4)Cathode
(5)Drain
Unit
PW 10µs DUTY CYCLE 1%
PW 10µs DUTY CYCLE 1%
60HZ / 1CYC.
W/TOTAL/MOUNTED ON
A CERAMIC BOARD
1/4