US5U29_1 Datasheet, PDF (1/5 Pages) Rohm – 2.5V Drive Pch+SBD MOS FET

Transistor
2.5V Drive Pch+SBD MOS FET
US5U29
US5U29
zStructure
Silicon P-channel MOS FET
Schottky Barrier DIODE
zFeatures
1) The US5U29 combines Pch MOS FET with a
Schottky barrier diode in a TUMT5 package.
2) Low on-resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
zExternal dimensions (Unit : mm)
TUMT5
2.0
1.3
0.65 0.65
(5) (4)
(1) (2) (3)
0.3
0.85Max.
0.77
0~0.1
0.17
Abbreviated symbol : U29
zApplications
Load switch, DC/DC conversion
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US5U29
Taping
TR
3000
zEquivalent circuit
(5)
(4)
∗2
∗1
(1)
(2)
∗1 ESD protection diode
∗2 Body diode
(1)Gate
(2)Source
(3) (3)Anode
(4)Cathode
(5)Drain
Rev.C
1/4